MODELLING OF CMOS AMS 0.35 μm N-DIFFUSION PHOTODIODE BEHAVIOUR
نویسندگان
چکیده
În această lucrare prezentăm modelarea comportării unei fotodiode CMOS cu difuzie de tip n realizată printr-un proces CMOS AMS 0.35 μm. Am simulat, folosind programele T-CAD, comportarea curentului fotogenerat şi a curentului de întuneric al fotodiodei, iar apoi am comparat rezultatele cu cele provenite dintr-un model comportamental al dispozitivului (Verilog-A). Rezultatele la care am ajuns în urma celor două tipuri de simulări sunt foarte asemănătoare şi, prin urmare, putem conchide că rezultatele obţinute folosind simulările de mai mare precizie realizate cu T-CAD confirmă datele din modelul Verilog-A.
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